| Installation type | Through-Hole | 
| packing | bulk,bulk | 
| Part status | stop production | 
| working temperature | 150°C(TJ) | 
| Encapsulation/Housing | IPAK/TP | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 100 V | 
| Current at 25 ° C - continuous drain (Id) | 17A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V | 
| On resistance (maximum) for different Ids and Vgs | 111 mΩ @ 8.5A,10V | 
| Gate charge (Qg) at different Vgs (maximum) | 19 nC @ 10 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1030 pF @ 20 V | 
| Power dissipation (maximum) | 1W(Ta),35W(Tc) |