ZXMN3B04N8TA
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ZXMN3B04N8TA
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ZXMN3B04N8TA

Brand:Diodes
Model:ZXMN3B04N8TA
stock:90360
Store:ShenZhen/Hongkong
Price:1+
$0.23
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SO
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 7.2A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 25 mΩ @ 7.2A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 23.1 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 2480 pF @ 15 V
Power dissipation (maximum) 2W(Ta)
Common problem
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