Installation type | Surface mount |
packing | TR |
Part status | On sale |
Encapsulation/Housing | SOT-223-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 100 V |
Current at 25 ° C - continuous drain (Id) | 1.7A(Ta) |
On resistance (maximum) for different Ids and Vgs | 350 mΩ @ 1.4A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 10.7 nC @ 10 V |
Input capacitance at different Vds (Ciss) (maximum) | 424 pF @ 50 V |