ZXM64N02XTA
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ZXM64N02XTA
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ZXM64N02XTA

Brand:Diodes
Model:ZXM64N02XTA
stock:3301
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-MSOP
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 5.4A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.7V,4.5V
On resistance (maximum) for different Ids and Vgs 40 mΩ @ 3.8A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 16 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 1100 pF @ 15 V
Power dissipation (maximum) 1.1W(Ta)
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