| Installation type | Surface mount |
| packing | TR,CT |
| Part status | On sale |
| working temperature | 150°C |
| Encapsulation/Housing | UFM |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 330mA(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4.5V |
| On resistance (maximum) for different Ids and Vgs | 1.31 Ω @ 100mA,4.5V |
| Vgs (th) (maximum) for different Ids | 1V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 1.2 nC @ 4 V |
| Vgs (max) | ±8V |
| Input capacitance at different Vds (Ciss) (maximum) | 43 pF @ 10 V |
| Power dissipation (maximum) | 800mW(Ta) |