| Installation type | Surface mount | 
| packing | TR,CT | 
| Part status | On sale | 
| working temperature | 150°C | 
| Encapsulation/Housing | CST3 | 
| Country of origin | Japan | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 20 V | 
| Current at 25 ° C - continuous drain (Id) | 180mA(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.2V,4V | 
| On resistance (maximum) for different Ids and Vgs | 3 Ω @ 50mA,4V | 
| Vgs (th) (maximum) for different Ids | 1V @ 1mA | 
| Vgs (max) | ±10V | 
| Input capacitance at different Vds (Ciss) (maximum) | 9.5 pF @ 3 V | 
| Power dissipation (maximum) | 100mW(Ta) |