| Installation type | Surface mount | 
| packing | TR,CT | 
| series | U-MOSIII | 
| Part status | On sale | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | UFM | 
| Country of origin | Japan | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 30 V | 
| Current at 25 ° C - continuous drain (Id) | 2.2A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4.5V | 
| On resistance (maximum) for different Ids and Vgs | 100 mΩ @ 500mA,4.5V | 
| Vgs (th) (maximum) for different Ids | 1.1V @ 100µA | 
| Vgs (max) | ±12V | 
| Input capacitance at different Vds (Ciss) (maximum) | 245 pF @ 10 V | 
| Power dissipation (maximum) | 500mW(Ta) |