| Installation type | Surface mount | 
| packing | TR | 
| series | U-MOSVIII-H | 
| Part status | On sale | 
| working temperature | 175°C | 
| Encapsulation/Housing | DPAK+ | 
| Country of origin | Japan | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 60 V | 
| Current at 25 ° C - continuous drain (Id) | 25A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V | 
| On resistance (maximum) for different Ids and Vgs | 18.5 mΩ @ 12.5A,10V | 
| Vgs (th) (maximum) for different Ids | 2.5V @ 100µA | 
| Gate charge (Qg) at different Vgs (maximum) | 15 nC @ 10 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 855 pF @ 10 V | 
| Power dissipation (maximum) | 57W(Tc) |