| Installation type | Through-Hole | 
| packing | pipe | 
| series | CoolSiC™ | 
| Part status | On sale | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | PG-TO247-4-1 | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | SiCFET(silicon carbide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 1200 V | 
| Current at 25 ° C - continuous drain (Id) | 56A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 15V,18V | 
| On resistance (maximum) for different Ids and Vgs | 40 mΩ @ 25A,18V | 
| Vgs (th) (maximum) for different Ids | 5.7V @ 10mA | 
| Gate charge (Qg) at different Vgs (maximum) | 63 nC @ 18 V | 
| Vgs (max) | +23V,-7V | 
| Input capacitance at different Vds (Ciss) (maximum) | 2120 pF @ 800 V | 
| Power dissipation (maximum) | 227W(Tc) |