| Installation type | Surface mount |
| packing | TR,CT |
| series | HEXFET® |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | Micro3™/SOT-23 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 12 V |
| Current at 25 ° C - continuous drain (Id) | 4.3A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.8V,4.5V |
| On resistance (maximum) for different Ids and Vgs | 50 mΩ @ 4.3A,4.5V |
| Vgs (th) (maximum) for different Ids | 950mV @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 15 nC @ 5 V |
| Vgs (max) | ±8V |
| Input capacitance at different Vds (Ciss) (maximum) | 830 pF @ 10 V |
| Power dissipation (maximum) | 1.3W(Ta) |