| Installation type | Surface mount | 
| packing | TR,CT,bulk | 
| series | OptiMOS™ | 
| Part status | Not applicable to new design | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | PG-TO252-3-11 | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | P channels | 
| Drain source voltage (Vdss) | 30 V | 
| Current at 25 ° C - continuous drain (Id) | 50A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V | 
| On resistance (maximum) for different Ids and Vgs | 10.5 mΩ @ 50A,10V | 
| Vgs (th) (maximum) for different Ids | 2V @ 85µA | 
| Gate charge (Qg) at different Vgs (maximum) | 55 nC @ 10 V | 
| Vgs (max) | +5V,-16V | 
| Input capacitance at different Vds (Ciss) (maximum) | 3770 pF @ 25 V | 
| Power dissipation (maximum) | 58W(Tc) |