| Installation type | Through-Hole |
| packing | pipe |
| series | CoolMOS™ P7 |
| Part status | On sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | PG-TO251-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 700 V |
| Current at 25 ° C - continuous drain (Id) | 12.5A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 360 mΩ @ 3A,10V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 150µA |
| Gate charge (Qg) at different Vgs (maximum) | 16.4 nC @ 10 V |
| Vgs (max) | ±16V |
| Input capacitance at different Vds (Ciss) (maximum) | 517 pF @ 400 V |
| Power dissipation (maximum) | 59.5W(Tc) |