| Installation type | Surface mount |
| packing | TR,CT |
| series | HEXFET® |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | D-Pak |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 6.6A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 480 mΩ @ 3.9A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 27 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 350 pF @ 25 V |
| Power dissipation (maximum) | 40W(Tc) |