IPT013N08NM5LFATMA1
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IPT013N08NM5LFATMA1
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IPT013N08NM5LFATMA1

Brand:Infineon
Model:IPT013N08NM5LFATMA1
stock:56946
Store:ShenZhen/Hongkong
Price:1+
$1.46
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series OptiMOS™
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-HSOF-8
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 80 V
Current at 25 ° C - continuous drain (Id) 333A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 1.3 mΩ @ 150A,10V
Vgs (th) (maximum) for different Ids 4.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 158 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 820 pF @ 40 V
Power dissipation (maximum) 278W(Tc)
Common problem
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