| Installation type | Through-Hole |
| packing | pipe |
| series | OptiMOS™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO220-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 6.9A(Ta), 62A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 33 mΩ @ 53A, 10V |
| Vgs (th) (maximum) for different Ids | 4V @ 5.55mA |
| Gate charge (Qg) at different Vgs (maximum) | 236 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 11000 pF @ 50 V |
| Power dissipation (maximum) | 3.8W(Ta),300W(Tc) |