IRLR4343TRR
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IRLR4343TRR
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IRLR4343TRR

Brand:Infineon
Model:IRLR4343TRR
stock:32027
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR
series HEXFET®
Part status stop production
working temperature -40°C ~ 175°C(TJ)
Encapsulation/Housing D-Pak
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 55 V
Current at 25 ° C - continuous drain (Id) 26A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 50 mΩ @ 4.7A,10V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 42 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 740 pF @ 50 V
Power dissipation (maximum) 79W(Tc)
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