| Installation type | Through-Hole | 
| packing | pipe | 
| series | HEXFET® | 
| Part status | stop production | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | IPAK(TO-251AA) | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 30 V | 
| Current at 25 ° C - continuous drain (Id) | 23A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V | 
| On resistance (maximum) for different Ids and Vgs | 45 mΩ @ 14A,10V | 
| Vgs (th) (maximum) for different Ids | 1V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 15 nC @ 4.5 V | 
| Vgs (max) | ±16V | 
| Input capacitance at different Vds (Ciss) (maximum) | 450 pF @ 25 V | 
| Power dissipation (maximum) | 45W(Tc) |