| Installation type | Through-Hole |
| packing | pipe |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | TO-262 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 150 V |
| Current at 25 ° C - continuous drain (Id) | 13A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 290 mΩ @ 6.6A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 66 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 860 pF @ 25 V |
| Power dissipation (maximum) | 3.8W(Ta),110W(Tc) |