| Installation type | Surface mount | 
| packing | CT | 
| Part status | stop production | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | PQFN(5x6)Single chip pad | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 30 V | 
| Current at 25 ° C - continuous drain (Id) | 32A(Ta),100A(Tc) | 
| On resistance (maximum) for different Ids and Vgs | 2.1 mΩ @ 50A,10V | 
| Vgs (th) (maximum) for different Ids | 2.35V @ 100µA | 
| Gate charge (Qg) at different Vgs (maximum) | 76 nC @ 10 V | 
| Input capacitance at different Vds (Ciss) (maximum) | 4400 pF @ 15 V |