IPD49CN10N G
Home
Category
MOSFET
IPD49CN10N G
The pictures are for reference only

IPD49CN10N G

Brand:Infineon
Model:IPD49CN10N G
stock:78111
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series OptiMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO252-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 20A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 49 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 4V @ 20µA
Gate charge (Qg) at different Vgs (maximum) 16 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1090 pF @ 50 V
Power dissipation (maximum) 44W(Tc)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification