IPI032N06N3GE8214AKSA1
Home
Category
MOSFET
IPI032N06N3GE8214AKSA1
The pictures are for reference only

IPI032N06N3GE8214AKSA1

Brand:Infineon
Model:IPI032N06N3GE8214AKSA1
stock:77708
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
WhatsApp:+8613510640449
product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series OptiMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO262-3-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 120A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 3.2 mΩ @ 100A,10V
Vgs (th) (maximum) for different Ids 4V @ 118µA
Gate charge (Qg) at different Vgs (maximum) 165 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 13000 pF @ 30 V
FET function -
Power dissipation (maximum) 188W(Tc)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Telegram
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification

Cookies

This site uses cookies to personalise your experience, analyse site traffic. By clicking Accept or continuing to browse the site you are agreeing to our use of cookies. You can read our Privacy Policy for more information.