| Memory format | DRAM |
| Installation type | Surface mount |
| packing | TR |
| series | Automotive, AEC-Q100 |
| Part status | stop production |
| Memory type | Volatile |
| storage capacity | 1Gb(64M x 16) |
| Voltage - Supply | 1.425V ~ 1.575V |
| working temperature | -40°C ~ 115°C(TC) |
| Memory interface | Paralleling |
| Clock frequency | 800 MHz |
| Access time | 20 ns |
| Encapsulation/Housing | 96-TFBGA |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Write cycle time - words, pages | 15ns |