| Memory format | DRAM |
| Installation type | Surface mount |
| packing | CT |
| Part status | On sale |
| Memory type | Volatile |
| storage capacity | 4Gb(256M x 16) |
| Voltage - Supply | 1.06V ~ 1.17V,1.7V ~ 1.95V |
| working temperature | -40°C ~ 95°C(TC) |
| Memory interface | LVSTL_11 |
| Clock frequency | 2.133 GHz |
| Encapsulation/Housing | 200-WFBGA |
| Country of origin | Taiwan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Write cycle time - words, pages | 18ns |