Total: 43
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Through-Hole
TB
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
100 V
40 V
50 V
200 V
400 V
600 V
500 V
150 V
60 V
300 V
45 V
1A
1.5A
2A
3A
5A
9A
1.3 V @ 1 A
500 mV @ 1 A
850 mV @ 3 A
500 mV @ 3 A
950 mV @ 1 A
850 mV @ 2 A
500 mV @ 2 A
680 mV @ 1 A
950 mV @ 5 A
1.5 V @ 1 A
1.2 V @ 1.5 A
570 mV @ 18 A
680 mV @ 3 A
920 mV @ 5 A
50 ns
35 ns
40 ns
250 ns
150 ns
10 µA @ 50 V
10 µA @ 400 V
5 µA @ 100 V
5 µA @ 600 V
10 µA @ 600 V
10 µA @ 200 V
500 µA @ 40 V
5 µA @ 400 V
10 µA @ 100 V
5 µA @ 200 V
100 µA @ 150 V
5 µA @ 50 V
500 µA @ 60 V
500 µA @ 100 V
10 µA @ 300 V
10 µA @ 150 V
500 µA @ 45 V
10 µA @ 500 V
500 µA @ 200 V
800 µA @ 45 V
8 µA @ 150 V
50pF @ 4V,1MHz
10pF @ 4V,1MHz
20pF @ 4V,1MHz
75pF @ 4V,1MHz
900pF @ 4V,1MHz