Total: 24
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Terminal installation
bulk
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
SiC Schottky
100 V
1200 V
30 V
45 V
15 V
150A
1.1 V @ 200 A
760 mV @ 150 A
460 mV @ 50 A
500 mV @ 150 A
500 mV @ 50 A
600 mV @ 150 A
2.05 V @ 150 A
2.7 V @ 150 A
-
355 ns
50 µA @ 100 V
1 mA @ 45 V
5 mA @ 45 V
5 mA @ 30 V
10 mA @ 45 V
5 mA @ 15 V
26 µA @ 1200 V
3 µA @ 1200 V
7000pF @ 5V,1MHz
7500pF @ 5V,1MHz