Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Through-Hole
bulk
CoolSiC™+
On sale
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
100 V
650 V
40A(DC)
1.19 V @ 90 A
1.7 V @ 40 A
0 ns
5 µs
10 µA @ 100 V
1.4 mA @ 650 V
1140pF @ 1V,1MHz