Total: 331
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
TR
TR,CT
pipe
TR,CT,bulk
bulk,bulk
Automotive, AEC-Q101
Military, MIL-PRF-19500/463
Automotive, AEC-Q101, SBR®
ECOPACK®2
Automotive, AEC-Q101, ECOPACK®2
CoolSiC™+
On sale
Final sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
-
SiC Schottky
FERD(Field effect rectifier device diode)
100 V
80 V
1200 V
40 V
50 V
200 V
400 V
600 V
1000 V
30 V
60 V
300 V
10 V
650 V
45 V
2 V
2000 V
1A
8A
500mA(DC)
200mA
150mA
3A
10A
30A
5A
50A(DC)
30A(DC)
6A
12A
50mA(DC)
13A(DC)
18A(DC)
5A(DC)
3A(DC)
2.5A
24A(DC)
215mA
10mA(DC)
34A(DC)
51A(DC)
29A(DC)
43A(DC)
4 ns
25 ns
35 ns
100 ns
45 ns
0 ns
9 ns
3.8 ns
10 µA @ 40 V
10 µA @ 1000 V
2 µA @ 200 V
50 nA @ 50 V
2 µA @ 100 V
25 µA @ 500 mV
2 µA @ 400 V
40 µA @ 60 V
8 µA @ 100 V
85 µA @ 30 V
5 µA @ 1200 V
50 µA @ 45 V
2 µA @ 600 V
5 µA @ 2000 V
470 µA @ 60 V
60 µA @ 650 V
100 µA @ 650 V
80 µA @ 650 V
35 µA @ 100 V
6 µA @ 200 V
360 µA @ 30 V
27 µA @ 420 V
40 µA @ 420 V
67 µA @ 420 V
14 µA @ 420 V
33 µA @ 420 V
53 µA @ 420 V
20 µA @ 420 V
2pF @ 0V,1MHz
60pF @ 4V,1MHz
45pF @ 4V,1MHz
4pF @ 4V,1MHz
0.15pF @ 0V,1MHz
33pF @ 1V,1MHz
40pF @ 4V,1MHz
3.5pF @ 6V,1MHz
8pF @ 5V,1MHz
6pF @ 4V,1MHz
480pF @ 0V,1MHz
414pF @ 0V,1MHz
300pF @ 0V,1MHz
130pF @ 0V,1MHz
0.25pF @ 200mV,1MHz
401pF @ 1V,1MHz
594pF @ 1V,1MHz
970pF @ 1V,1MHz
205pF @ 1V,1MHz
495pF @ 1V,1MHz
783pF @ 1V,1MHz
302pF @ 1V,1MHz