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Diode rectifier

Total: 9

JANTXV1N6625
Brand：Microchip
Stock：31625
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.1KV 1A D5A
RFQ
JANTX1N6625
Brand：Microchip
Stock：76096
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.1KV 1A AXIAL
RFQ
JANTXV1N6625US
Brand：Microchip
Stock：22961
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.1KV 1A D5A
RFQ
JAN1N6625US
Brand：Microchip
Stock：78610
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.1KV 1A D5A
RFQ
JANTX1N6625US
Brand：Microchip
Stock：35627
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.1KV 1A D5A
RFQ
1N6625US
Brand：Microchip
Stock：2554
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.1KV 1A A-MELF
RFQ
JAN1N6625
Brand：Microchip
Stock：50527
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1KV 1A AXIAL
RFQ
1N6625
Brand：Microchip
Stock：42639
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.1KV 1A AXIAL
RFQ
MUR180EG
Brand：ON
Stock：13264
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 800V 1A AXIAL
RFQ
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

series

SWITCHMODE™

Military, MIL-PRF-19500/585

Part status

On sale

stop production

speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

1000 V

800 V

1100 V

Current average rectification (Io)

1A

Voltage at different If - forward (Vf)

1.75 V @ 1 A

Reverse recovery time (trr)

60 ns

30 ns

100 ns

Current - reverse leakage at different Vr

1 µA @ 1000 V

10 µA @ 800 V

1 µA @ 1100 V

500 nA @ 1100 V

Capacitance at different Vr and F

-

10pF @ 10V,1MHz

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