Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
POWERMITE®
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1A
3A
520 mV @ 3 A
-
20 ns
410 µA @ 30 V
42 µA @ 15 V
90pF @ 10V,1MHz