410 mV @ 1 A-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Category

Diode rectifier

Total: 2

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR,CT

series

Part status

On sale

speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

30 V

Current average rectification (Io)

Voltage at different If - forward (Vf)

410 mV @ 1 A

Reverse recovery time (trr)

Current - reverse leakage at different Vr

1 mA @ 30 V

Capacitance at different Vr and F

110pF @ 4V,1MHz

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