1.5 V @ 3 A-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A SMC

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A SMC

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A SMB

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 500V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 500V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 3A TPFA

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 3A TP

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

TR

TR,CT

TB

series

Part status

On sale

stop production

speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

400 V

600 V

500 V

Current average rectification (Io)

3A

Voltage at different If - forward (Vf)

1.5 V @ 3 A

Reverse recovery time (trr)

60 ns

50 ns

35 ns

55 ns

Current - reverse leakage at different Vr

10 µA @ 400 V

5 µA @ 600 V

10 µA @ 600 V

5 µA @ 400 V

5 µA @ 500 V

20 µA @ 400 V

Capacitance at different Vr and F

-

50pF @ 4V,1MHz

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