Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
23 V
1A
620 mV @ 1 A
-
50 µA @ 40 V
12 µA @ 15 V
125pF @ 0V,1MHz
30pF @ 5V,1MHz