Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1A
390 mV @ 1 A
-
1.5 mA @ 30 V
390 µA @ 30 V