Total: 52
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
SiCFET(silicon carbide)
P channels
N channels
±20V
±30V
±25V
+20V,-2V
-
Grade knot
104W(Tc)