28.8W(Ta)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Select MOSFET

Home

Category

MOSFET

Total: 1

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 60V 9A DPAK

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±20V

FET function

-

Power dissipation (maximum)

28.8W(Ta)

Reset

Cookies Notification

Click the button below to copy the Whatsapp

RFQ

Product *

Num

Email *

Company

We will reply to you through your email address as soon as we receive your RFQ