2.1W(Ta),35W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 4

BSZ105N04NSGATMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 40V 11A/40A 8TSDSON

BSZ088N03LSGATMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 30V 12A/40A 8TSDSON

BSZ088N03MSGATMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 30V 11A/40A 8TSDSON

BSZ097N04LSGATMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 40V 12A/40A 8TSDSON

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

Final sale

stop production

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±20V

FET function

-

Power dissipation (maximum)

2.1W(Ta),35W(Tc)

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