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DDR

Total: 6

MT46V64M8TG-5B:J
Brand：Micron
Stock：11864
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
RFQ
MT46V64M8CY-5B L:J
Brand：Micron
Stock：14270
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT46V64M4P-5B:M
Brand：Micron
Stock：18222
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
RFQ
MT46V32M8CY-5B:M
Brand：Micron
Stock：19412
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
RFQ
MT46V16M16CY-5B:M
Brand：Micron
Stock：10277
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
RFQ
MT46V64M8CY-5B:J
Brand：Micron
Stock：12578
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

bulk

Memory type

Volatile

storage capacity

256Mb(16M x 16)

256Mb(32M x 8)

256Mb(64M x 4)

512Mb(64M x 8)

64Mb(8M x 8)

256Mb(16M x 16),512M(32M x 16)

Voltage - Supply

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

55-TFBGA

66-TSSOP (0,400,10,16mm)

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