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DDR

Total: 9

MT46V64M8T67A3WC1
Brand：Micron
Stock：19158
Store: ShenZhen/Hongkong
Description：DDR 512M DIE 64MX8
RFQ
MT46V64M8TG-5B:J
Brand：Micron
Stock：11864
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
RFQ
MT46V64M8P-5B AIT:J
Brand：Micron
Stock：17190
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
RFQ
MT46V64M8CY-5B AIT:J
Brand：Micron
Stock：14972
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT46V64M8TG-5B IT:J
Brand：Micron
Stock：16331
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
RFQ
MT46V64M8CV-5B IT:J
Brand：Micron
Stock：19528
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT46V64M8CY-5B L:J
Brand：Micron
Stock：14270
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT46V64M8CY-5B IT:J
Brand：Micron
Stock：13593
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT46V64M8CY-5B:J
Brand：Micron
Stock：12578
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

bulk

Memory type

Volatile

storage capacity

512Mb(64M x 8)

Voltage - Supply

2.3V ~ 2.7V

2.5V ~ 2.7V

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

48-TSOP

55-TFBGA

132-TBGA

169-LFBGA

66-TSSOP (0,400,10,16mm)

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