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DDR

Total: 6

MT46V32M16CY-5B L IT:J
Brand：Micron
Stock：19659
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT46V32M16CV-5B IT:J
Brand：Micron
Stock：13196
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT46V32M16P-5B XIT:J
Brand：Micron
Stock：19754
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
RFQ
MT46V32M16P-5B IT:J
Brand：Micron
Stock：16341
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
RFQ
MT46V32M16BN-5B L IT:F
Brand：Micron
Stock：15861
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT46V32M16BN-5B IT:F
Brand：Micron
Stock：12671
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

Memory type

Volatile

storage capacity

512Mb(32M x 16)

1Gb(1G x 1)

Voltage - Supply

2.5V ~ 2.7V

working temperature

-40°C ~ 85°C(TA)

Encapsulation/Housing

60-TFBGA

80-BQFP

80-LBGA

88-TFBGA,CSPBGA

60-VFBGA

66-TSSOP (0,400,10,16mm)

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