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DDR

Total: 7

MT46V32M8TG-75 IT:G TR
Brand：Micron
Stock：15931
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
RFQ
MT46V32M8TG-75 IT:G
Brand：Micron
Stock：13994
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
RFQ
MT46V32M8FG-6 IT:G TR
Brand：Micron
Stock：18594
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
RFQ
MT46V32M8P-6T IT:G TR
Brand：Micron
Stock：12664
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
RFQ
MT46V32M8P-6T IT:G
Brand：Micron
Stock：10396
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
RFQ
MT46V32M8BG-6 IT:G TR
Brand：Micron
Stock：11813
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
RFQ
MT46V32M8TG-6T IT:G TR
Brand：Micron
Stock：14388
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(32M x 8)

16Gb(4G x 4)

Voltage - Supply

1.14V ~ 1.3V,1.7V ~ 1.95V

2.3V ~ 2.7V

working temperature

-40°C ~ 85°C(TA)

-30°C ~ 105°C(TC)

-30°C ~ 85°C(TC)

Encapsulation/Housing

60-FBGA

16-SOIC(0.295,7.50mm wide)

66-TSSOP (0,400,10,16mm)

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