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DDR2

Total: 8

IS43DR16160A-37CBL
Brand：ISSI
Stock：316
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PAR 84TWBGA
RFQ
IS43DR16160B-37CBLI
Brand：ISSI
Stock：14666
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PAR 84TWBGA
RFQ
IS43DR16160B-37CBL
Brand：ISSI
Stock：17066
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PAR 84TWBGA
RFQ
MT47H64M8CB-37E IT:B
Brand：Micron
Stock：11614
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H32M16CC-37E L:B
Brand：Micron
Stock：16982
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
RFQ
MT47H32M16CC-37E IT:B
Brand：Micron
Stock：18989
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
RFQ
MT47H16M16BG-37V:B
Brand：Micron
Stock：14253
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 84FBGA
RFQ
MT47H16M16BG-37E:B TR
Brand：Micron
Stock：16036
Store: ShenZhen/Hongkong
Description：IC SDRAM 256MBIT 266MHZ 84FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

512Mb(32M x 16)

512Mb(64M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

-40°C ~ 85°C(TA)

-40°C ~ 95°C(TC)

0°C ~ 85°C(TC)

0°C ~ 70°C(TA)

Clock frequency

266 MHz

267 MHz

Access time

500 ps

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