DRAM256Mb(32M x 8)533 MHz-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 3

MT47H32M8BP-3:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

MT47H32M8BP-37E:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

MT47H64M16NF-187E:M

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 84FBGA

Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

bulk

Memory type

Volatile

storage capacity

256Mb(32M x 8)

1Gb(64M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

267 MHz

333 MHz

533 MHz

Access time

500 ps

350 ps

450 ps

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