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DDR2

Total: 8

MT47H64M8SH-25E AAT:H TR
Brand：Micron
Stock：18584
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H64M8SH-25E AAT:H
Brand：Micron
Stock：16705
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H64M8CB-25:B TR
Brand：Micron
Stock：11503
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H64M8CB-25:B
Brand：Micron
Stock：11882
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H64M16NF-25E AAT:M TR
Brand：Micron
Stock：12531
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
RFQ
MT47H32M16NF-25E AAT:H TR
Brand：Micron
Stock：14392
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
RFQ
MT47H64M8SH-25E:H TR
Brand：Micron
Stock：14728
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H64M8SH-25E IT:H TR
Brand：Micron
Stock：16166
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR

TR,CT

Memory type

Volatile

storage capacity

512Mb(32M x 16)

512Mb(64M x 8)

1Gb(64M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

-40°C ~ 95°C(TC)

-40°C ~ 105°C(TA)

0°C ~ 85°C(TC)

Clock frequency

400 MHz

Access time

400 ps

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