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DDR2

Total: 8

MT47H64M8CB-37E IT:B
Brand：Micron
Stock：11614
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H64M8CB-25:B
Brand：Micron
Stock：11882
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H32M16CC-37E L:B
Brand：Micron
Stock：16982
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
RFQ
MT47H32M16CC-37E IT:B
Brand：Micron
Stock：18989
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
RFQ
MT47H16M16BG-37V:B
Brand：Micron
Stock：14253
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 84FBGA
RFQ
MT47H256M8EB-25E:C
Brand：Micron
Stock：14734
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 60FBGA
RFQ
MT47H128M16RT-25E AIT:C
Brand：Micron
Stock：18212
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 84FBGA
RFQ
MT47H256M8EB-25E:C TR
Brand：Micron
Stock：13742
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 60FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

512Mb(32M x 16)

512Mb(64M x 8)

2Gb(128M x 16)

2Gb(256M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

-40°C ~ 95°C(TC)

0°C ~ 85°C(TC)

Clock frequency

267 MHz

400 MHz

Access time

500 ps

400 ps

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