Select DDR2
Home
Category
DDR2

Total: 11

MT47H512M4THN-25E:M
Brand：Micron
Stock：12142
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 63FBGA
RFQ
MT47H512M4THN-25E:M TR
Brand：Micron
Stock：18038
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 63FBGA
RFQ
MT47H512M4EB-25E:C TR
Brand：Micron
Stock：10689
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 60FBGA
RFQ
MT47R512M4EB-25E:C
Brand：Micron
Stock：11986
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 60FBGA
RFQ
MT47H512M4THN-3:H
Brand：Micron
Stock：17617
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 63FBGA
RFQ
MT47H512M4THN-25E:H
Brand：Micron
Stock：12573
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 63FBGA
RFQ
MT47H512M4EB-3:C
Brand：Micron
Stock：10142
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 60FBGA
RFQ
MT47H512M4EB-187E:C
Brand：Micron
Stock：16681
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 60FBGA
RFQ
MT47H512M4EB-25E:C
Brand：Micron
Stock：11304
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 60FBGA
RFQ
MT47H512M4THN-37E:E TR
Brand：Micron
Stock：18363
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 63FBGA
RFQ
MT47H512M4THN-3:E TR
Brand：Micron
Stock：10021
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 63FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR

Memory type

Volatile

storage capacity

2Gb(512M x 4)

Voltage - Supply

1.55V ~ 1.9V

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

267 MHz

333 MHz

400 MHz

533 MHz

Access time

500 ps

350 ps

400 ps

450 ps

Reset
Cookies Notification
Home
Category
Whatsapp
Search
Click the button below to copy the Whatsapp
RFQ
Closesubmit
We will reply to you through your email address as soon as we receive your RFQ