4Gb(512M x 8)-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 3

MT47H512M8WTR-25E:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 4GBIT PARALLEL 63FBGA

MT47H512M8WTR-3:C

Store: ShenZhen/Hongkong

Description：IC DRAM 4GBIT PARALLEL 63FBGA

MT47H512M8WTR-25E:C

Store: ShenZhen/Hongkong

Description：IC DRAM 4GBIT PARALLEL 63FBGA

Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR

Memory type

Volatile

storage capacity

4Gb(512M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

333 MHz

400 MHz

Access time

400 ps

450 ps

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