TR,CTDRAM2Gb(256M x 8)267 MHz-40°C ~ 125°C(TC)-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 4

MT47H32M8BP-37E:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

MT47H256M8EB-25E:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 60FBGA

MT47H128M4BT-37E:A TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 92FBGA

MT47H64M4BP-37E:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

Memory type

Volatile

storage capacity

256Mb(32M x 8)

256Mb(64M x 4)

512Mb(128M x 4)

2Gb(256M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

267 MHz

400 MHz

Access time

500 ps

400 ps

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