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DDR2

Total: 6

MT47H32M16CC-3E:B TR
Brand：Micron
Stock：11425
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
RFQ
MT47H32M16CC-3E:B
Brand：Micron
Stock：16911
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
RFQ
MT47H128M8BT-3 L:A
Brand：Micron
Stock：17718
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 92FBGA
RFQ
MT47H32M8BP-3:B TR
Brand：Micron
Stock：17848
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
RFQ
MT47H16M16BG-3:B TR
Brand：Micron
Stock：12090
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 84FBGA
RFQ
MT47H64M16NF-187E:M
Brand：Micron
Stock：13484
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR

TR,CT

bulk

Memory type

Volatile

storage capacity

256Mb(16M x 16)

256Mb(32M x 8)

512Mb(32M x 16)

1Gb(64M x 16)

1Gb(128M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

333 MHz

533 MHz

Access time

350 ps

450 ps

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