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DDR2

Total: 4

IS43DR86400E-3DBL
Brand：ISSI
Stock：9622
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60TWBGA
RFQ
IS43DR86400E-3DBLI
Brand：ISSI
Stock：10340
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60TWBGA
RFQ
MT47H64M8CB-37E IT:B
Brand：Micron
Stock：11614
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
MT47H64M8CB-25:B
Brand：Micron
Stock：11882
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

Memory type

Volatile

storage capacity

512Mb(64M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

-40°C ~ 85°C(TA)

-40°C ~ 95°C(TC)

0°C ~ 85°C(TC)

Clock frequency

267 MHz

333 MHz

400 MHz

Access time

500 ps

450 ns

400 ps

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