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DDR2

Total: 7

IS43DR86400E-3DBLI-TR
Brand：ISSI
Stock：14025
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60TWBGA
RFQ
IS43DR16320E-3DBLI-TR
Brand：ISSI
Stock：17857
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84TWBGA
RFQ
IS43DR16320E-3DBLI
Brand：ISSI
Stock：15226
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84TWBGA
RFQ
IS43DR86400E-3DBLI
Brand：ISSI
Stock：10340
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60TWBGA
RFQ
MT47H64M16NF-25E XIT:M TR
Brand：Micron
Stock：15674
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
RFQ
MT47H64M16NF-25E AIT:M TR
Brand：Micron
Stock：18157
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
RFQ
MT47H32M16NF-25E AIT:H TR
Brand：Micron
Stock：15601
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
RFQ
Brand

Samsung

Micron

Skhynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR

Memory type

Volatile

storage capacity

512Mb(32M x 16)

512Mb(64M x 8)

1Gb(64M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

-40°C ~ 85°C(TA)

Clock frequency

333 MHz

400 MHz

Access time

450 ns

400 ps

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